Charge Collection Efficiency in a segmented semiconductor detector interstrip region

Interstrip Capacitance of a Prototype Stipixel Detector

We measured the inter-strip capacitance on a prototype DC-coupled "stripixel" detector (SPD) employing circular spirals with two methods, each of them employing a RC-chip to bias and read out the detectors. Both yielded the same value of Cint = 1.1 pF for a strip length of 1.4 mm, indicating the total inter-strip capacitance to be much larger than on ordinary silicon strip detectors (SSD).

Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates

High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possi...

Charge -coupled- device charge -collection efficiency and the photon- transfer technique

Dual radioisotopes simultaneous SPECT of 99mTc-tetrofosmin and 123I-BMIPP using a semiconductor detector.

Objective(s): The energy resolution of a cadmium-zinc-telluride (CZT) solid-state semiconductor detector is about 5%, and is superior to the resolution of the conventional Anger type detector which is 10%. Also, the window width of the high-energy part and of the low-energy part of a photo peak window can be changed separately. In this study, we used a semiconductor detector and examined the ef...

Influence of a Space Charge Region on Spin Transport in Semiconductor